Übergangsmetall-nitrid-AlGaN Schichten mittets Sputterepitaxie für elektronische Anwendungen

Goal of this project is to identify specific TM-group-III-N layers with epitaxial quality for a potential application in group-III-nitride electronics. For this we will first study the properties of pure and alloyed group-IIIb-, -IVb-, and -Vb-nitrides (Cr, V, Ti, Sc, Nb, Zr, Ta, Hf) with AlN and in some cases also with GaN. This will result in a database of material parameters, namely crystal structure, lattice parameter, electrical and optical properties for a wide range of compositions.
Their potential should be then evaluated within the framework of thin films applied as active layers, i.e. for polarization optimization in HEMTs, novel HEMT structures as, for example, GaN/ScN/GaN binary high mobility electron channels or as thicker films for an application as highly conductive buffer layer and electrically conducting strain engineering layers, enabling true vertical electronic devices on Si substrates. For the latter pure TMN alloys or TMN alloys with AlN are the most promising candidates, while for active layers, apart from binary TMN layers, also alloys with GaN are interesting.